Modelling and performance analysis of dielectric inserted side contact multilayer graphene nanoribbon interconnects

被引:23
|
作者
Mekala, Girish Kumar [1 ]
Agrawal, Yash [1 ]
Chandel, Rajeevan [1 ]
机构
[1] NIT Hamirpur, Elect & Commun Engn Dept, Hamirpur 177005, Himachal Prades, India
关键词
dielectric materials; graphene; nanoribbons; integrated circuit interconnections; finite difference time-domain analysis; integrated circuit modelling; crosstalk; copper; performance analysis; dielectric inserted side contact multilayer graphene nanoribbon interconnects; di-side-GNR coupled interconnects; unconditionally stable finite-difference time-domain technique; USFDTD technique; Courant stability criterion; crosstalk effect; HSPICE simulation; transient analysis; Cu; C;
D O I
10.1049/iet-cds.2016.0376
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, performance of dielectric inserted side contact multilayer graphene nanoribbon (Di-side-GNR) coupled interconnects using unconditionally stable finite-difference time-domain (USFDTD) technique has been investigated. The model developed for the same, overcomes the limitation of Courant stability criterion prevalent in the conventional finite-difference time-domain (FDTD) technique. The proposed model accurately analyses the crosstalk effect in copper (Cu), side contact multilayer graphene nanoribbon and Di-side-GNR interconnects. It is found that the crosstalk effect is least in Di-side-GNR amongst the three types of interconnect considered in this study. The proposed model and HSPICE simulation results match closely. Further, for transient analysis USFDTD technique based proposed model takes nearly 1.5 times lesser CPU runtime compared to the conventional FDTD technique.
引用
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页码:232 / 240
页数:9
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