Tuning of the Nickel Silicide Schottky Barrier Height on p-Type Silicon by Indium Implantation

被引：20
|
作者：
Alptekin, Emre [1 ]
Ozturk, Mehmet C. [1 ]
机构：
[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 12期
关键词：
Contact resistivity; indium (In); nickel; Schottky barrier; CONTACT TECHNOLOGY; SOURCE/DRAIN; SELENIUM; SULFUR;
D O I：
10.1109/LED.2009.2033451
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, indium (In) implantation is introduced as a method to tune the Schottky barrier height of nickel silicide (NiSi) contacts formed on p-type silicon. Indium implantation is performed prior to NiSi formation and the implant conditions are chosen such that the implanted region is entirely consumed by the silicide. During silicide formation, some of the indium segregates at the NiSi-Si interface and can have a significant impact on the Schottky barrier height. It is shown that the barrier height decreases almost linearly with the In dose from 0.37 eV on p-type Si to 0.16 eV with an In dose of 1 x 10(14) cm(-2) on p-type Si.
引用
收藏
页码：1272 / 1274
页数：3
相关论文
共 50 条
  • [41] SCHOTTKY CONTACT OF GALLIUM ON P-TYPE SILICON
    Modi, B. P.
    Patel, K. D.
    JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2011, 3 (01) : 684 - 690
  • [42] P-TYPE PTSI SCHOTTKY-DIODE BARRIER HEIGHT DETERMINED FROM IV MEASUREMENT
    CHIN, VWL
    STOREY, JWV
    GREEN, MA
    SOLID-STATE ELECTRONICS, 1989, 32 (06) : 475 - 478
  • [43] Schottky barrier height of metal contacts to p-type alpha 6H-SiC
    Waldrop, J.R.
    Journal of Applied Physics, 1994, 75 (09):
  • [44] Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation
    Loh, Wei-Yip
    Etienne, Hasnaa
    Coss, Brian
    Ok, Injo
    Turnbaugh, Dean
    Spiegel, Yohann
    Torregrosa, Frank
    Banti, Joel
    Roux, Laurent
    Hung, Pui-Yee
    Oh, Jungwoo
    Sassman, Barry
    Radar, Kelly
    Majhi, Prashant
    Tseng, Hsing-Huang
    Jammy, Rajarao
    IEEE ELECTRON DEVICE LETTERS, 2009, 30 (11) : 1140 - 1142
  • [45] Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films
    Lim, Phyllis S.Y.
    Lee, Rinus T.P.
    Sinha, Mantavya
    Chi, Dong Zhi
    Yeo, Yee-Chia
    Journal of Applied Physics, 2009, 106 (04):
  • [46] A STUDY OF SCHOTTKY BARRIER HEIGHT INHOMOGENEITY ON In/P-SILICON
    Modi, B. P.
    JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2011, 3 (01) : 680 - 683
  • [47] Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films
    Lim, Phyllis S. Y.
    Lee, Rinus T. P.
    Sinha, Mantavya
    Chi, Dong Zhi
    Yeo, Yee-Chia
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (04)
  • [48] SCHOTTKY-BARRIER HEIGHT MODIFICATION ON N-TYPE AND P-TYPE GAINP WITH THIN INTERFACIAL SI
    MILLER, TJ
    BACKES, GB
    NATHAN, MI
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (12) : 7931 - 7934
  • [49] SCHOTTKY-BARRIER HEIGHT OF A TI-W ALLOY ON N-TYPE AND P-TYPE SI
    ABOELFOTOH, MO
    TU, KN
    PHYSICAL REVIEW B, 1986, 33 (10): : 6572 - 6578
  • [50] PROPERTIES OF SCHOTTKY BARRIERS ON P-TYPE INDIUM-PHOSPHIDE
    KAMIMURA, K
    SUZUKI, T
    KUNIOKA, A
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (11) : L695 - L698
12345