Tuning of the Nickel Silicide Schottky Barrier Height on p-Type Silicon by Indium Implantation

被引：20
|
作者：
Alptekin, Emre [1 ]
Ozturk, Mehmet C. [1 ]
机构：
[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 12期
关键词：
Contact resistivity; indium (In); nickel; Schottky barrier; CONTACT TECHNOLOGY; SOURCE/DRAIN; SELENIUM; SULFUR;
D O I：
10.1109/LED.2009.2033451
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, indium (In) implantation is introduced as a method to tune the Schottky barrier height of nickel silicide (NiSi) contacts formed on p-type silicon. Indium implantation is performed prior to NiSi formation and the implant conditions are chosen such that the implanted region is entirely consumed by the silicide. During silicide formation, some of the indium segregates at the NiSi-Si interface and can have a significant impact on the Schottky barrier height. It is shown that the barrier height decreases almost linearly with the In dose from 0.37 eV on p-type Si to 0.16 eV with an In dose of 1 x 10(14) cm(-2) on p-type Si.
引用
收藏
页码：1272 / 1274
页数：3
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