Type conversion of n-type silicon nanowires to p-type by diffusion of gold ions

被引：9
|
作者：
Koo, Jamin
Lee, Myeongwon
Kang, Jeongmin
Yoon, Changjoon
Kim, Kwangeun
Jeon, Youngin
Kim, Sangsig [1 ]
机构：
[1] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2010年 / 25卷 / 04期
关键词：
FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; ELECTRONICS; BEHAVIOR;
D O I：
10.1088/0268-1242/25/4/045010
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The simple type conversion of n-type silicon nanowires (SiNWs) to p-type by the diffusion of Au ions is demonstrated in this study. An Au thin film with a thickness of 10 nm was thermally deposited on an n-type SiNW and a rapid thermal annealing process was performed subsequently to diffuse the Au ions into the SiNW. The electrical characteristics of a back-gate field-effect transistor with a channel composed of the Au-diffused SiNW show that the Au-diffused SiNW acts as a p-type one. The type conversion phenomenon of the SiNW caused by the diffusion of Au ions is discussed in detail in this paper.
引用
收藏
页数：6
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