Field emission of broadband semiconductors and dielectrics

被引：0
|
作者：
Baskin, LM [1 ]
机构：
[1] St Petersburg State Univ Telecommun, St Petersburg 192061, Russia
来源：
ISDEIV: XXITH INTERNATIONAL SYMPOSIUM ON DISCHARGES AND ELECTRICAL INSULATION IN VACUUM, VOLS 1 AND 2, PROCEEDINGS | 2004年 / 21卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：3 / 8
页数：6
相关论文
共 50 条
  • [21] Energy exchange in field emission from semiconductors
    Chung, Moon S.
    Jang, Yu. J.
    Mayer, A.
    Cutler, Paul H.
    Miskovsky, Nicholas M.
    2007 IEEE 20TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE, 2007, : 50 - +
  • [22] GENERAL FEATURES OF FIELD EMISSION FROM SEMICONDUCTORS
    BASKIN, LM
    LVOV, OI
    FURSEY, GN
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 47 (01): : 49 - &
  • [23] FIELD EMISSION OF HOT ELECTRONS FROM SEMICONDUCTORS
    NEUMANN, H
    ANNALEN DER PHYSIK, 1969, 24 (1-2) : 72 - &
  • [24] CONCERNING LAWS GOVERNING FIELD EMISSION IN SEMICONDUCTORS
    KLIMIN, AI
    SEDYKH, BN
    SOKOLSKAYA, IL
    SOVIET PHYSICS-SOLID STATE, 1961, 2 (08): : 1673 - 1677
  • [25] FIELD EMISSION FROM SURFACE STATES IN SEMICONDUCTORS
    MODINOS, A
    SURFACE SCIENCE, 1974, 42 (01) : 205 - 227
  • [26] Designing a broadband terahertz plasmonic field enhancer with a homojunction of semiconductors
    Gu, Yu
    Chen, Zhi
    Chen, Leyi
    APPLIED PHYSICS EXPRESS, 2020, 13 (01)
  • [27] Directional emission of a broadband squeezed microwave field
    Cao, Rong-teng
    Xie, Ji-kun
    Ren, Ya-long
    Gao, Shao-yan
    Ma, Sheng-li
    PHYSICAL REVIEW A, 2025, 111 (02)
  • [28] DERIVATION OF THE EQUATION OF THERMOSTIMULATED EXOELECTRON EMISSION FROM SEMICONDUCTORS AND DIELECTRICS IN A CASE OF THERMOACTIVATION MECHANISMS
    ALEKSEYEV, VP
    PREOBRAZHENSKII, MN
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1984, 27 (03): : 121 - 122
  • [29] ON MIGRATIONAL POLARIZATION IN DIELECTRICS AND SEMICONDUCTORS
    ORESHKIN, PT
    STARCHENKOV, BK
    ANDREEVA, LP
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1970, (05): : 13 - +
  • [30] Gate dielectrics on compound semiconductors
    Droopad, R
    Passlack, M
    England, N
    Rajagopalan, K
    Abrokwah, J
    Kummel, A
    MICROELECTRONIC ENGINEERING, 2005, 80 : 138 - 145
12345