High surface area gamma-molybdenum nitride has shown promise as a charge storage material. The addition of amorphous tantalum oxide to the molybdenum nitride system not only improves the film cohesion tremendously, but also widens the voltage stability window from 0.8 to 1.1 V. This occurs without adversely effecting the capacitance.
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Kuvempu Univ, Dept Studies & Res Ind Chem, Sch Chem Sci, Shankaragatta 577451, IndiaKuvempu Univ, Dept Studies & Res Ind Chem, Sch Chem Sci, Shankaragatta 577451, India
Shashank, M.
Naik, H. S. Bhojya
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Kuvempu Univ, Dept Studies & Res Ind Chem, Sch Chem Sci, Shankaragatta 577451, IndiaKuvempu Univ, Dept Studies & Res Ind Chem, Sch Chem Sci, Shankaragatta 577451, India
Naik, H. S. Bhojya
Patil, Shivaraj B.
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Siddaganga Inst Technol, Dept Chem, Energy Mat Res Lab, Tumakuru 572103, IndiaKuvempu Univ, Dept Studies & Res Ind Chem, Sch Chem Sci, Shankaragatta 577451, India
Patil, Shivaraj B.
Viswantha, R.
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Jyothi Inst Technol, Dept Chem, Bangalore 560032, Karnataka, IndiaKuvempu Univ, Dept Studies & Res Ind Chem, Sch Chem Sci, Shankaragatta 577451, India
Viswantha, R.
Nagaraju, G.
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Siddaganga Inst Technol, Dept Chem, Energy Mat Res Lab, Tumakuru 572103, IndiaKuvempu Univ, Dept Studies & Res Ind Chem, Sch Chem Sci, Shankaragatta 577451, India