Improved porous mixture of molybdenum nitride and tantalum oxide as a charge storage material

被引：41
|
作者：
Deng, CZ [1 ]
Pynenburg, RAJ [1 ]
Tsai, KC [1 ]
机构：
[1] Pinnacle Res Inst Inc, Los Gatos, CA 95032 USA
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1998年 / 145卷 / 04期
关键词：
D O I：
10.1149/1.1838416
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
High surface area gamma-molybdenum nitride has shown promise as a charge storage material. The addition of amorphous tantalum oxide to the molybdenum nitride system not only improves the film cohesion tremendously, but also widens the voltage stability window from 0.8 to 1.1 V. This occurs without adversely effecting the capacitance.
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页码：L61 / L63
页数：3
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