Data retention times in SOI-DRAMs

被引：1
|
作者：
Kim, HS [1 ]
Choi, DU [1 ]
Lee, SH [1 ]
Lee, SK [1 ]
Park, JK [1 ]
Kim, KN [1 ]
Park, JW [1 ]
机构：
[1] SAMSUNG ELECT CO,TECHNOL DEV,MEMORY DEVICE BUSINESS,KIHEUNG EUP,KYUNGKI DO,SOUTH KOREA
来源：
1996 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS | 1996年
关键词：
D O I：
10.1109/VLSIT.1996.507819
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：126 / 127
页数：2
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