Layer-by-layer growth of ε-Ga2O3 thin film by metal-organic chemical vapor deposition

被引：41

作者：

Chen, Zimin ^{[1
]}

Li, Zeqi ^{[1
]}

Zhuo, Yi ^{[1
]}

Chen, Weiqu ^{[1
]}

Ma, Xuejin ^{[1
]}

Pei, Yanli ^{[1
]}

Wang, Gang ^{[1
,2
]}

机构：

[1] Sun Yat Sen Univ, HEMC, State Key Lab Optoelect Mat & Technol, Guangzhou 510006, Guangdong, Peoples R China

[2] Sun Yat Sen Univ, Foshan Inst, Foshan 528225, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2018年 / 11卷 / 10期

关键词：

PHASE EPITAXY; GALLIUM OXIDE; GAN; INDIUM;

D O I：

10.7567/APEX.11.101101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Layer-by-layer morphology is a crucial signature of the quality of epitaxial thin films. In this study, layer-by-layer growth of an epsilon-phase gallium oxide (epsilon-Ga2O3) thin film is demonstrated using metal-organic chemical vapor deposition. A two-step growth method, in which a nucleation layer is grown at 600 degrees C and an epilayer is grown at 640 degrees C, is employed to fabricate a high-quality epsilon-Ga2O3 thin film on a c-plane sapphire substrate. The morphology of the epsilon-Ga2O3 film is evaluated by atomic force microscope. The density of screw-type threading dislocations determined by an X-ray diffraction rocking curve is as low as 1.8 x 10(8)cm(-2). (C) 2018 The Japan Society of Applied Physics

引用

页数：4

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