Low-voltage organic thin-film transistors with hydrophobic hafnium oxynitride film as gate insulator

被引：13

作者：

Tsai, Li-Shiuan ^{[1
]}

Wang, Chung-Hwa ^{[1
]}

Chen, Wei-Yu ^{[1
]}

Wang, Wen-Chieh ^{[1
]}

Hwang, Jennchang ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

来源：

ORGANIC ELECTRONICS | 2010年 / 11卷 / 01期

关键词：

OTFT; HfON; Pentacene; Gate dielectric; FIELD-EFFECT TRANSISTORS; DIELECTRICS; PERFORMANCE;

D O I：

10.1016/j.orgel.2009.10.008

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An excellent gate dielectric of amorphous HfON (a-HfON) can be fabricated by flashing a Hf metal layer prior to a-HfON deposition. Nitrogen incorporation in the HfON film can reduce leakage current density from 8 x 10(-7) to 10(-7) A/cm(2). And surface roughness of a-HfON is reduced by the flash Hf metal layer from 1.9 to 1.2 nm. With the flash Hf metal layer, field effect mobility (0.17 cm(2)/V s), threshold voltage (-0.3 V), subthreshold swing (-0.209 V/decade), and on/off current ratio (3.2 x 10(3)) can be achieved for organic thin-film transistors with a-HfON gate dielectric. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：123 / 126

页数：4

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