Synchronous rectifier circuit with DC biasing transformer

被引：0

作者：

Kudo, K ^{[1
]}

Kuwabara, K ^{[1
]}

Miyachika, E ^{[1
]}

机构：

[1] Fujitsu Ltd, Nakahara Ku, Kawasaki, Kanagawa 21188, Japan

来源：

INTELEC 97 - 19TH INTERNATIONAL TELECOMMUNICATIONS ENERGY CONFERENCE, PROCEEDINGS: POWER AND ENERGY SYSTEMS IN CONVERGING MARKETS | 1997年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper introduced a new method of MOS-FET gate-drive for self-synchronized rectifier circuit with DC biasing transformer. The voltage of the secondary winding voltage is always rectangular, thus the commutation MOS-FET gate can be full-driven during the off-time of the primary main switch. By the method, we can get conversion efficiency 91% at the output power 50W (5V,10A).

引用

页码：40 / 45

页数：6

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