Synchronous rectifier circuit with DC biasing transformer

被引：0
|
作者：
Kudo, K [1 ]
Kuwabara, K [1 ]
Miyachika, E [1 ]
机构：
[1] Fujitsu Ltd, Nakahara Ku, Kawasaki, Kanagawa 21188, Japan
来源：
INTELEC 97 - 19TH INTERNATIONAL TELECOMMUNICATIONS ENERGY CONFERENCE, PROCEEDINGS: POWER AND ENERGY SYSTEMS IN CONVERGING MARKETS | 1997年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper introduced a new method of MOS-FET gate-drive for self-synchronized rectifier circuit with DC biasing transformer. The voltage of the secondary winding voltage is always rectangular, thus the commutation MOS-FET gate can be full-driven during the off-time of the primary main switch. By the method, we can get conversion efficiency 91% at the output power 50W (5V,10A).
引用
收藏
页码：40 / 45
页数：6
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