Electrical characterization of silicon dioxide thin films prepared by chemical vapor deposition for tetrakis(diethylamino)silane and ozone

Silicon dioxide thin films were prepared bs a low-temperature atmospheric-pressure chemical vapor deposition method from tetrakis(diethylamino)silane-ozone at a substrate temperature above 200 degrees C. The relative dielectric constants of the films prepared in this study were lower than those for the films prepared from tetraethoxysilane-ozone. The relative dielectric constants for both films were nearly proportional to the absorbance of Si-O . bonds at about 950 cm(-1), indicating that an ionic polarization due to the nonbridging oxygen was closely connected with the relative dielectric constant of the film prepared using ozone at a low substrate temperature.