Photoelectrochemical texturization of n-type multicrystalline silicon

被引：3
|
作者：
Tena-Zaera, R. [1 ]
Bastide, S. [1 ]
Levy-Clement, C. [1 ]
机构：
[1] CNRS, UMR 7182, ICMPE, F-94320 Thiais, France
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2007年 / 204卷 / 05期
关键词：
D O I：
10.1002/pssa.200674304
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Taking advantage of the electrochemical formation of macropores in 'aqueous HF under illumination, we have developed an efficient photoelectrochemical (PEC) texturization on n-type multicrystalline Si (mc-Si) wafers which leads to a decrease in the reflectivity of solar cells. An optimized mc-Si texturized surface exhibits an 8.5% effective reflectivity (lambda = 400-1000 nm, AM1.5 standard solar illumination). (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：1260 / 1265
页数：6
相关论文
共 50 条
  • [41] n-Type Multicrystalline Silicon Wafers Prepared from Plasma Torch Refined Upgraded Metallurgical Feedstock
    Martinuzzi, S.
    Perichaud, I.
    Trassy, C.
    Degoulange, J.
    PROGRESS IN PHOTOVOLTAICS, 2009, 17 (05): : 297 - 305
  • [42] The Optimized Texturing Angle for Triangular Texturization in Multicrystalline Silicon Solar Cells
    Keshtkar, Hojjat
    Mansourghanaei, Hassan
    Javadiun, Erfan
    Rahimi, Parisa
    2017 IEEE INTERNATIONAL CONFERENCE ON ELECTRO INFORMATION TECHNOLOGY (EIT), 2017, : 177 - 181
  • [43] Elucidating and Engineering Recombination-Active Metal-Rich Precipitates in n-type Multicrystalline Silicon
    Morishige, Ashley E.
    Fenning, David P.
    Hofstetter, Jasmin
    Jensen, Mallory Ann
    Ramanathan, Saptharishi
    Wang, Chenlei
    Lai, Barry
    Buonassisi, Tonio
    2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2014, : 3004 - 3010
  • [44] ELECTRON-BEAM IRRADIATION OF N-TYPE POROUS SILICON OBTAINED BY PHOTOELECTROCHEMICAL ETCHING
    MAURICE, JL
    RIVIERE, A
    ALAPINI, A
    LEVYCLEMENT, C
    APPLIED PHYSICS LETTERS, 1995, 66 (13) : 1665 - 1667
  • [45] PHOTOELECTROCHEMICAL AND CORROSION STUDY OF N-TYPE SNSSE
    FOTOUHI, B
    KATTY, A
    GOROCHOV, O
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) : 2181 - 2184
  • [46] Texturization of multicrystalline silicon wafers by chemical treatment using metallic catalyst
    Tsujino, K
    Matsumura, M
    Nishimoto, Y
    PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C, 2003, : 1507 - 1510
  • [47] THE ELECTROPOLISHING OF N-TYPE SILICON
    MASLOVA, LV
    MATVEEV, OA
    AFANASEV, VF
    SOVIET PHYSICS-SOLID STATE, 1962, 3 (09): : 1968 - 1970
  • [48] Saw damage as an etch mask for the acidic texturization of multicrystalline silicon wafers
    Acker, Joerg
    Langner, Thomas
    Meinel, Birgit
    Sieber, Tim
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2018, 74 : 238 - 248
  • [49] Evaluation of a New Acid Solution for Texturization of Multicrystalline Silicon Solar Cells
    Watanabe, Ryosuke
    Abe, Shuuji
    Haruyama, Satoshi
    Suzuki, Tatsunobu
    Onuma, Mitsuo
    Saito, Yoji
    INTERNATIONAL JOURNAL OF PHOTOENERGY, 2013, 2013
  • [50] ELECTROPOLISHING OF N-TYPE GERMANIUM AND P-TYPE AND N-TYPE SILICON
    KLEIN, DL
    KOLB, GA
    POMPLIANO, LA
    SULLIVAN, MV
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (03) : C60 - C60
12345