Low-resistivity Ni/Pt Ohmic contacts to p-type N-doped ZnO

被引：10
|
作者：
Lu, Y. F. [1 ]
Ye, Z. Z. [1 ]
Zeng, Y. J. [1 ]
Zhu, L. P. [1 ]
Huang, J. Y. [1 ]
Zhao, B. H. [1 ]
机构：
[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
来源：
SOLID-STATE ELECTRONICS | 2010年 / 54卷 / 07期
基金：
中国国家自然科学基金;
关键词：
p-type ZnO; Ohmic contacts; CTLM; SIMS; NI/AU; FILMS;
D O I：
10.1016/j.sse.2010.03.012
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low-resistivity Ni/Pt Ohmic contacts to p-type N-doped ZnO were fabricated in this paper. Ni/Pt Ohmic contacts showed a lowest specific contact resistivity of 3.81 x 10(-6) Omega cm(2) after 450 degrees C annealing, which is lower than any other reported Ohmic contacts to p-type ZnO. The interface reactions during annealing and the Ohmic contact formation mechanism were investigated by secondary ion mass spectrometry measurements. The results showed that Ni out-diffused to react with Pt and Zn out-diffused a little, too. These interface diffusions as well as activation of N acceptors during annealing induced such a low specific contact resistivity. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码：732 / 735
页数：4
相关论文
共 50 条
  • [41] LOW-RESISTANCE OHMIC CONTACTS FOR P-TYPE ZNTE
    OZAWA, M
    HIEI, F
    TAKASU, M
    ISHIBASHI, A
    AKIMOTO, K
    APPLIED PHYSICS LETTERS, 1994, 64 (09) : 1120 - 1122
  • [42] Plasma-assisted oxide removal from p-type GaSb for low resistivity ohmic contacts
    Thanh-Nam Tran
    Patra, Saroj Kumar
    Breivik, Magnus
    Fimland, Bjorn-Ove
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2015, 33 (06):
  • [43] Low-resistance ohmic contacts to p-type GaN
    Opto-Electronics and Syst. Labs., Indust. Technol. Research Institute, Hsinchu, 310, Taiwan
    Appl Phys Lett, 9 (1275-1277):
  • [44] Low-resistance ohmic contacts to p-type GaN
    Li, YL
    Schubert, EF
    Graff, JW
    Osinsky, A
    Schaff, WF
    APPLIED PHYSICS LETTERS, 2000, 76 (19) : 2728 - 2730
  • [45] Ohmic Contact Properties and Annealing Effect for Au/Ni on p-Type P-Doped ZnO
    Hu, Guangxia
    Gong, Hao
    Chor, E. F.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2009, 156 (09) : H740 - H743
  • [46] Low resistance ohmic contacts to p-type GaN and AlGaN
    Chary, I.
    Borisov, B.
    Kuryatkov, V.
    Kudryavtsev, Yu.
    Asomoza, R.
    Nikishin, S.
    Holtz, M.
    PERFORMANCE AND RELIABILITY OF SEMICONDUCTOR DEVICES, 2009, 1108 : 169 - +
  • [47] ELECTRICAL-PROPERTIES AND MICROSTRUCTURES OF AU/PT/TI/NI OHMIC CONTACTS TO P-TYPE ZNTE
    MOCHIZUKI, K
    TERANO, A
    MOMOSE, M
    TAIKE, A
    KAWATA, M
    GOTOH, J
    NAKATSUKA, SI
    APPLIED PHYSICS LETTERS, 1995, 67 (01) : 112 - 114
  • [48] Characterization of low-resistance ohmic contacts to n- and p-type InGaAs
    Lin, J. C.
    Yu, S. Y.
    Mohney, S. E.
    JOURNAL OF APPLIED PHYSICS, 2013, 114 (04)
  • [49] Comparison of Pt-based ohmic contacts with Ti-Al ohmic contacts for p-type SiC
    Mohammad, FA
    Cao, Y
    Chang, KC
    Porter, LM
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (08): : 5933 - 5938
  • [50] Oxidation treatment on Ni/Au ohmic contacts to p-type GaN
    Chen, ZZ
    Qin, ZX
    Hu, XD
    Yu, TJ
    Zhang, B
    Yang, ZJ
    Tong, YZ
    Ding, XM
    Zhang, GY
    5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2189 - 2192
12345