Synthesis of magnetron sputtered AgBiS2 thin films

AgBiS2 films were prepared by direct current magnetron sputtering method by depositing atom ratio 1:1 of silver bismuth metal precursor on a common sodium-calcium glass substrate by rapid annealing under sulfur and nitrogen atmosphere. The annealing process was obtained by changing the annealing temperature and time. The films were characterized by XRD, UV-Vis, SEM, APM, XPS. AgBiS2 thin films were grown on the substrate through sulfide annealing. After annealing at 475 degrees C for 30 min, the surface of the film is smooth and the roughness is the smallest. The average grain size grows to the maximum of 1.2 mu m. The film has a strong absorption coefficient in the range of ultraviolet and visible light. The absorption limit is as high as 1400 nm. and the bandgap is 0.853 eV. Through the study of sputtered atomic layer deposition and sulfurized annealing, AgBiS2 film was prepared on the substrate by magnetron sputtering for the first time. It provides a feasible method for the preparation of AgBiS2 thin films. It has great potential in photovoltaic. photoelectric and other applications.