Room-temperature single-hole transistors made using semiconductor carbon nanotube with artificial defects near carrier depletion region

被引：12
|
作者：
Kamimura, T
Maeda, M
Sakamoto, K
Matsumoto, K
机构：
[1] Osaka Univ, Ibaraki, Osaka 5670047, Japan
[2] CREST, Japan Sci & Technol Agcy, Kawaguchi, Saitama 3320012, Japan
[3] Univ Tsukuba, Tsukuba, Ibaraki 3058577, Japan
[4] Meiji Univ, Kawasaki, Kanagawa 2148571, Japan
[5] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 1A期
关键词：
single-electron transistor; carbon nanotube; room temperature operation; Coulomb diamond; defect;
D O I：
10.1143/JJAP.44.461
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have succeeded in observing the single hole transistor characteristics in position-controlled grown carbon nanotubes (CNTs) with artificial defects formed by a chemical process. Coulomb blockade characteristics were observed around the hole depletion region even at room temperature. At a low temperature, however, the Coulomb blockade characteristics were observed both in hole and electron transport regions.
引用
收藏
页码：461 / 464
页数：4
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