Single-event effects experienced by astronauts and microelectronic circuits flown in space

被引:23
|
作者
McNulty, PJ
机构
[1] Department of Physics and Astronomy, Clcmson University, Clemson
关键词
D O I
10.1109/23.490894
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Models developed for explaining the light flashes experienced by astronauts on Apollo and Skylab missions were used with slight modification to explain upsets observed in microelectronic circuits, Both phenomena can be explained by the simple assumption that an event occurs whenever a threshold number of ionizations or isomerizations are generated within a sensitive volume, Evidence is consistent with the threshold being sharp in both cases, but fluctuations in the physical stimuli lead to a gradual rather than sharp increase in cross section with LET, Successful use of the model requires knowledge of the dimensions of the sensitive volume and the value of threshold, Techniques have been developed to determine these SEU parameters in modern circuits.
引用
收藏
页码:475 / 482
页数:8
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