A Frequency-Dependent Capacitance-Voltage Model for Thin-Film Transistors

被引：7
|
作者：
Guo, Xuekai [1 ]
Wang, Mingxiang [1 ]
Han, Zhiyuan [1 ]
机构：
[1] Soochow Univ, Dept Microelect, Suzhou 215006, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 04期
关键词：
Frequency-dependent capacitance-voltage (CV) model; thin-film transistors (TFTs); transmission line method (TLM); trapped charges; C-V; EXTRACTION;
D O I：
10.1109/TED.2016.2523517
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A frequency-dependent capacitance-voltage (CV) model is developed for thin-film transistors (TFTs). The model includes not only a static CV model for channel charge analysis and a transmission line method for RC delay effect but also the frequency-dependent trapped charges effect on the measured capacitance. The complete model based on the same set of model parameters is verified by the measured CV characteristics of top-gated self-aligned poly-Si TFTs with varied frequencies from 10 kHz to 1.5 MHz for two devices of different channel lengths, and at both room temperature and an elevated temperature of 100 degrees C.
引用
收藏
页码：1666 / 1673
页数：8
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