Spectral Behavior and Coherence Length of GaN-, and AlGaInP-based Light-Emitting-Diodes

被引:0
|
作者
Hetzel, R. [1 ]
Leising, G. [1 ]
机构
[1] Graz Univ Technol, A-8010 Graz, Austria
关键词
Junction temperature; light emitting diodes; coherence length; GaN; AlGaInP; spectral behavior; JUNCTION TEMPERATURE; QUANTUM-WELLS; DEPENDENCE;
D O I
10.1117/12.2037875
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The coherence length of electromagnetic waves created by different light sources is a largely overlooked parameter. Since the coherence length and its spectral distribution are essential for the entire field of interference, ranging from unintended destructive and constructive pattern to intended interference determining the nature of structural colors. We studied the spectral emission behaviour of GaN- and AlGaInP-based Light-Emitting-Diodes (LED) under thermodynamic equilibrium conditions driven by direct current as well as by short current pulses (500 ns) in the temperature range from 4.2 to 390 Kelvin. The coherence length under the different driving conditions was measured via a Fabry-Perot interference setup. We discuss the validity and limitations of the conventional determination method from the emission linewidth and lineshape. Besides the distinct shifts of the emission wavelength accompanied by significant changes of the full width at half maximum, we found quite high values for the coherence length exceeding 0.15 millimeters for the blue emission and 0.4 millimeters for the red emission at room temperature, respectively. Furthermore this contribution will also discuss the nature and interrelationships of coherence length, emission peak wavelength and the spectral distribution (lineshape and linewidth) of the investigated LEDs.
引用
收藏
页数:11
相关论文
共 50 条
  • [1] LIGHT-EMITTING-DIODES BASED ON GAN
    BOULOU, M
    FURTADO, M
    JACOB, G
    PHILIPS TECHNICAL REVIEW, 1977, 37 (9-10): : 237 - 240
  • [2] Controlled growth variation for the detuning of AlGaInP-based microcavity light emitting diodes
    Swiss Federal Inst of Technology, Lausanne, Switzerland
    Conf Proc Int Conf Indium Phosphide and Relat Mater, (111-114):
  • [3] Investigation of Trapezoidal Well for Improving the Light Efficiency in AlGaInP-Based Light-Emitting Diodes
    Oh, Hwa Sub
    Song, A. Ri
    Jung, Sung Hoon
    Jung, Tae Hoon
    Kim, Young Jin
    Lee, Hyung Joo
    Cho, Young Dae
    Baek, Jong Hyeob
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 16 (02) : 1867 - 1870
  • [4] HIGH-PERFORMANCE ALGAINP VISIBLE LIGHT-EMITTING-DIODES
    KUO, CP
    FLETCHER, RM
    OSENTOWSKI, TD
    LARDIZABAL, MC
    CRAFORD, MG
    ROBBINS, VM
    APPLIED PHYSICS LETTERS, 1990, 57 (27) : 2937 - 2939
  • [5] Absorption and light scattering in InGaN-on-sapphire- and AlGaInP-based light-emitting diodes
    Schad, SS
    Neubert, B
    Eichler, C
    Scherer, M
    Habel, F
    Seyboth, M
    Scholz, F
    Hofstetter, D
    Unger, P
    Schmid, W
    Karnutsch, C
    Streubel, K
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2004, 22 (10) : 2323 - 2332
  • [6] Increase in extraction efficiency of AlGaInP-based light-emitting diodes by surface texture
    Jiang Wen-jing
    Xu Chen
    Chen Yi-xin
    Shen Guang-di
    Song Xiao-wei
    JOURNAL OF CENTRAL SOUTH UNIVERSITY OF TECHNOLOGY, 2007, 14 : 24 - 26
  • [7] ELECTRIC PROPERTIES OF GAN LIGHT-EMITTING-DIODES
    SHINTANI, A
    MINAGAWA, S
    JOURNAL OF APPLIED PHYSICS, 1977, 48 (04) : 1522 - 1528
  • [8] ALGAINP VISIBLE RESONANT-CAVITY LIGHT-EMITTING-DIODES
    LOTT, JA
    SCHNEIDER, RP
    ZOLPER, JC
    MALLOY, KJ
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (06) : 631 - 633
  • [9] Enhanced light extraction from AlGaInP-based red light- emitting diodes with photonic crystals
    Tang, Xiansheng
    Han, Lili
    Ma, Ziguang
    Deng, Zhen
    Jiang, Yang
    Wang, Wenxin
    Chen, Hong
    Du, Chunhua
    Jia, Haiqiang
    OPTICS EXPRESS, 2021, 29 (04) : 5993 - 5999
  • [10] Enhancement of light extraction efficiency of AlGaInP-based light emitting diodes by silicon oxide hemisphere array
    Tang, Xiansheng
    Wang, Lu
    Zhao, Minglong
    Huo, Wenxue
    Han, Lili
    Deng, Zhen
    Jiang, Yang
    Wang, Wenxin
    Chen, Hong
    Du, Chunhua
    Jia, Haiqiang
    OPTICS COMMUNICATIONS, 2021, 481