Line-edge roughness, part 2

被引：0
|
作者：
Mack, Chris A.
机构：
来源：
MICROLITHOGRAPHY WORLD | 2007年 / 16卷 / 02期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：12 / 14
页数：3
相关论文
共 50 条
  • [41] Theoretical analysis of line-edge roughness using FFT techniques
    Ohfuji, T
    Endo, M
    Morimoto, A
    [J]. MICROLITHOGRAPHY 1999: ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVI, PTS 1 AND 2, 1999, 3678 : 732 - 738
  • [42] Comprehensive Analysis of Line-Edge and Line-Width Roughness for EUV Lithography
    Bonam, Ravi
    Liu, Chi-Chun
    Breton, Mary
    Sieg, Stuart
    Seshadri, Indira
    Saulnier, Nicole
    Shearer, Jeffrey
    Muthinti, Raja
    Patlolla, Raghuveer
    Huang, Huai
    [J]. EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY VIII, 2017, 10143
  • [43] An Effective Modeling Framework for the Analysis of Interconnects Subject to Line-Edge Roughness
    Manfredi, Paolo
    Vande Ginste, Dries
    De Zutter, Daniel
    [J]. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2015, 25 (08) : 502 - 504
  • [44] Controlling line-edge roughness in EUV resist with sturdy, small molecules
    不详
    [J]. SOLID STATE TECHNOLOGY, 2007, 50 (03) : 34 - 34
  • [45] Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part I-Modeling and Simulation Method
    Jiang, Xiaobo
    Wang, Runsheng
    Yu, Tao
    Chen, Jiang
    Huang, Ru
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (11) : 3669 - 3675
  • [46] Experimental investigation of the impact of line-edge roughness on MOSFET performance and yield
    Croon, JA
    Leunissen, LHA
    Jurczak, M
    Benndorf, M
    Rooyackers, R
    Ronse, K
    Decoutere, S
    Sansen, W
    Maes, HE
    [J]. ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2003, : 227 - 230
  • [47] An Analytical Model for Line-Edge Roughness Limited Mobility of Graphene Nanoribbons
    Goharrizi, Arash Yazdanpanah
    Pourfath, Mahdi
    Fathipour, Morteza
    Kosina, Hans
    Selberherr, Siegfried
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (11) : 3725 - 3735
  • [48] Stochastic modeling and simulation of photoresist surface and line-edge roughness evolution
    Patsis, G. P.
    Drygiannakis, D.
    Constantoudis, V.
    Raptis, I.
    Gogolides, E.
    [J]. EUROPEAN POLYMER JOURNAL, 2010, 46 (10) : 1988 - 1999
  • [49] Stochastic Simulation Studies of Line-Edge Roughness in Block Copolymer Lithography
    Kim, Sang-Kon
    [J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2014, 14 (08) : 6143 - 6145
  • [50] Spatial scaling metrics of mask-induced line-edge roughness
    Naulleau, Patrick P.
    Gallatin, Gregg
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (06): : 1903 - 1910
12345