A Model of Staggered Organic Thin-Film Transistors with Contact Resistance

被引：1
|
作者：
Rim, Tai-Uk [1 ]
Sohn, Chang-Woo [1 ]
Jeong, Yoon-Ha [1 ]
机构：
[1] Pohang Univ Sci & Technol POSTECH, Pohang 790784, Gyeongbuk, South Korea
来源：
2009 IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE | 2009年
关键词：
D O I：
10.1109/NMDC.2009.5167524
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we propose a current equation of organic thin-film transistors including a consideration of the contact resistance. The variable range hopping (VRH) model and the current crowding model are chosen for the charge transport of organic semiconductors and an effect of the contact resistance, respectively. The characteristic curves of our proposed model highly show consensus with the measured data. The contact resistance has more weight for the linear regime than for the saturation regime because charge carriers are crowded in the contact region between an electrode and the channel layer, so the carrier injection is decelerated due to the bottle-neck effect.
引用
收藏
页码：158 / 161
页数：4
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