A Model of Staggered Organic Thin-Film Transistors with Contact Resistance

In this paper, we propose a current equation of organic thin-film transistors including a consideration of the contact resistance. The variable range hopping (VRH) model and the current crowding model are chosen for the charge transport of organic semiconductors and an effect of the contact resistance, respectively. The characteristic curves of our proposed model highly show consensus with the measured data. The contact resistance has more weight for the linear regime than for the saturation regime because charge carriers are crowded in the contact region between an electrode and the channel layer, so the carrier injection is decelerated due to the bottle-neck effect.