Observation of resistive switching in a graphite/hexagonal boron nitride/graphite heterostructure memristor

With the atomically sharp interface and stable switching channel, van der Waals (vdW) heterostructure memristors have attracted extensive interests for the application of high-density memory and neuromorphic computing. Here, we demonstrate a new type of vdW heterostructure memristor device by sandwiching a single-crystalline h-BN layer between two thin graphites. In such a device, a stable bipolar resistive switching (RS) behavior has been observed for the first time. We also characterize their switching performance, and observe an on/off ratio of >10 (3) and a minimum RESET voltage variation coefficient of 3.81%. Our work underscores the potential of 2D materials and vdW heterostructures for emerging memory and neuromorphic applications.