Temperature Dependence of Efficiency in GaInN/GaN Light-Emitting Diodes with a GaInN Underlayer

被引：1
|
作者：
Kim, Kyurin [1 ]
Cho, Jaehee [1 ]
Meyaard, David S. [2 ]
Lin, Guan-Bo [2 ]
Schubert, E. Fred [2 ]
Kim, Jong Kyu [3 ]
机构：
[1] Chonbuk Natl Univ, Sch Semicond & Chem Engn, Semicond Phys Res Ctr, Jeonju 561756, South Korea
[2] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Future Chips Constellat, Troy, NY 12180 USA
[3] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea
来源：
INTERNATIONAL JOURNAL OF APPLIED CERAMIC TECHNOLOGY | 2016年 / 13卷 / 02期
基金：
新加坡国家研究基金会;
关键词：
INGAN UNDERLYING LAYERS; QUANTUM-WELLS; GAN;
D O I：
10.1111/ijac.12483
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The temperature dependence of the efficiency (i.e., temperature-mediated efficiency droop) in blue light-emitting diodes (LEDs) is investigated. A GaInN/GaN LED with a GaInN underlayer having an indium mole fraction of 8% shows less temperature dependence of efficiency, compared to the LED without an underlayer. Better carrier confinement in the active region of the LED with a GaInN underlayer is proposed to reduce carrier leakage from the active region at high temperature. The results indicate that the insertion of an underlayer leads to an improvement of the LED's radiative efficiency and its high-temperature-tolerant performance.
引用
收藏
页码：234 / 238
页数：5
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