Investigation of Schottky emission and space charge limited current (SCLC) in Au/SnO2/n-Si Schottky diode with gamma-ray irradiation

被引：18

作者：

Akgul, Fatime Duygu ^{[1
]}

Eymur, Serkan ^{[1
]}

Akin, Ummuhan ^{[2
]}

Yuksel, Omer Faruk ^{[2
]}

Karadeniz, Hande ^{[1
]}

Tugluoglu, Nihat ^{[1
]}

机构：

[1] Giresun Univ, Dept Energy Syst Engn, Giresun, Turkey

[2] Selcuk Univ, Dept Phys, Konya, Turkey

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2021年 / 32卷 / 12期

关键词：

ELECTRICAL PERFORMANCE; PARAMETERS; CAPACITANCE; DEFECTS; DENSITY; SIZE;

D O I：

10.1007/s10854-021-06138-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The current-voltage characteristics of Au/SnO2/n-Si Schottky diode before and after irradiation by Co-60 gamma-ray with an irradiation dose of 10 kGy have been investigated. The effects of gamma-ray irradiation on the main diode parameters have been studied. The forward bias ln(I-F)-ln(V-F) characteristics confirmed that the conduction mechanism is dominated by the space-charge limited current (SCLC) conduction. Also, the current transport mechanism of the Au/SnO2/n-Si Schottky diode has been examined through ln(I-R)-V-R(1/2) characteristics, indicating that the Schottky emission dominates the current mechanism for 0 kGy and 10 kGy.

引用

页码：15857 / 15863

页数：7

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