Molecular chemistry of H-Si(111) surfaces.

被引：0
|
作者：
Chidsey, CED [1 ]
机构：
[1] Stanford Univ, Dept Chem, Stanford, CA 94305 USA
来源：
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 1998年 / 215卷
关键词：
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
083-ANYL
引用
收藏
页码：U84 / U84
页数：1
相关论文
共 50 条
  • [31] Nucleation of trace copper on the H-Si(111) surface in aqueous fluoride solutions
    Homma, T
    Wade, CP
    Chidsey, CED
    JOURNAL OF PHYSICAL CHEMISTRY B, 1998, 102 (41): : 7919 - 7923
  • [32] Morphology control of Cu clusters formed on H-Si(111) surface in solution by Si potential
    Hara, K
    Ohdomari, I
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (11A): : L1333 - L1335
  • [33] Structure and chemistry of high-index Si and Ge surfaces.
    Whitman, LJ
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2000, 219 : U570 - U570
  • [34] INVERSE-PHOTOEMISSION STUDY OF NON-RECONSTRUCTED SI(111) SURFACES - A COMPARISON BETWEEN H-SI(111)1X1 AND AS-SI(111)1X1
    BOUZIDI, S
    GUYAUX, JL
    LANGLAIS, V
    BELKHIR, H
    DEBEVER, JM
    THIRY, PA
    SURFACE SCIENCE, 1995, 331 (pt B) : 1244 - 1249
  • [35] Origin of the complication of the Si(111)-(7x7) surfaces.
    Jiang, GP
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2003, 226 : U393 - U393
  • [36] Etch-pit initiation by dissolved oxygen on terraces of H-Si(111)
    Wade, CP
    Chidsey, CED
    APPLIED PHYSICS LETTERS, 1997, 71 (12) : 1679 - 1681
  • [37] The physical chemistry of surfaces.
    Adamson, AW
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2001, 221 : U320 - U320
  • [38] Hydrogen desorption kinetics from H-Si (111) surfaces studied by optical sum frequency generation and second harmonic generation
    Sattar, Md Abdus
    Khuat Thi Thu Hien
    Miyauchi, Yoshihiro
    Mizutani, Goro
    Rutt, Harvey N.
    SURFACE AND INTERFACE ANALYSIS, 2016, 48 (11) : 1235 - 1239
  • [39] Investigation of light initiated oxidation of hydrogen passivated silicon surfaces:: Hx-Si(100) and H-Si(111) (1X1)
    Morse, KA
    SILICON MATERIALS-PROCESSING, CHARACTERIZATION AND RELIABILITY, 2002, 716 : 279 - 284
  • [40] The interaction of carbon with Si(111):As and Si(111):H surfaces, a theoretical study
    Mutombo, P.
    Chab, V.
    SURFACE SCIENCE, 2009, 603 (04) : 590 - 596
12345