Molecular chemistry of H-Si(111) surfaces.

被引：0
|
作者：
Chidsey, CED [1 ]
机构：
[1] Stanford Univ, Dept Chem, Stanford, CA 94305 USA
来源：
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 1998年 / 215卷
关键词：
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
083-ANYL
引用
收藏
页码：U84 / U84
页数：1
相关论文
共 50 条
  • [1] The preparation of ideally ordered flat H-Si(111) surfaces
    Munford, ML
    Cortès, R
    Allongue, P
    SENSORS AND MATERIALS, 2001, 13 (05) : 259 - 269
  • [2] Reactivity of the H-Si (111) surface
    Terry, J
    Mo, R
    Wigren, C
    Cao, RY
    Mount, G
    Pianetta, P
    Linford, MR
    Chidsey, CED
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 133 (1-4): : 94 - 101
  • [3] Towards modelling the vibrational signatures of functionalized surfaces: carboxylic acids on H-Si(111) surfaces
    Feugmo, Conrard Giresse Tetsassi
    Champagne, Benoit
    Caudano, Yves
    Cecchet, Francesca
    Chabal, Yves J.
    Liegeois, Vincent
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2012, 24 (12)
  • [4] Optical second harmonic intensity images of hydrogen deficiency on H-Si(111) surfaces
    Miyauchi, Y.
    Sano, H.
    Mizutani, G.
    E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2006, 4 : 105 - 109
  • [5] On the roughness of perfectly flat H-Si(111) surfaces an atomic force microscopy approach
    Ramonda, M
    Dumas, P
    Salvan, F
    SURFACE SCIENCE, 1998, 411 (1-2) : L839 - L843
  • [6] Competing Mechanistic Pathways of Ethylene Functionalization of Positively Charged H-Si(111) Surfaces
    Yang, Li-Kun
    Su, Ya-Qiong
    Williams, Christopher T.
    Yang, Fang-Zu
    Wu, De-Yin
    Tian, Zhong-Qun
    JOURNAL OF PHYSICAL CHEMISTRY C, 2014, 118 (45): : 25987 - 25993
  • [7] Origin of differing reactivities of aliphatic chains on H-Si(111) and oxide surfaces with metal
    Hacker, Christina A.
    Richter, Curt A.
    Gergel-Hackett, Nadine
    Richter, Lee J.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2007, 111 (26): : 9384 - 9392
  • [8] Organometallic chemistry at molecular surfaces.
    Allara, D
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2000, 219 : U505 - U505
  • [9] Electronic structure of Yb/H-Si(111) interface
    Li, HN
    Wang, XX
    He, SL
    Zhang, HJ
    Li, HY
    Bao, SN
    CHINESE PHYSICS, 2004, 13 (11): : 1941 - 1946
  • [10] The preparation of flat H-Si(111) surfaces in 40% NH4F revisited
    Allongue, P
    de Villeneuve, CH
    Morin, S
    Boukherroub, R
    Wayner, DDM
    ELECTROCHIMICA ACTA, 2000, 45 (28) : 4591 - 4598
12345