Low-Loss Air-Isolated Through-Silicon Vias for Silicon Interposers

被引：14

作者：

Oh, Hanju ^{[1
]}

Thadesar, Paragkumar A. ^{[1
]}

May, Gary S. ^{[1
]}

Bakir, Muhannad S. ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2016年 / 26卷 / 03期

关键词：

Air-isolation; low-loss; silicon interposer; through-silicon via (TSV); 2.5-dimensional IC (2.5D IC);

D O I：

10.1109/LMWC.2016.2524506

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An air-isolated through-silicon via (TSV) technique is proposed to reduce radio-frequency (RF) losses in silicon interposers. A testbed containing air-isolated and conventional TSVs is fabricated and characterized from 10 MHz to 20 GHz with an L-2L de-embedding technique. The proposed air-isolated TSV technique yields 46.7% lower insertion loss compared to conventional TSVs at 20 GHz from 3-D full-wave simulations and measurements. Moreover, the impact of the air-isolation region width between TSVs on capacitance and conductance is quantified.

引用

页码：168 / 170

页数：3

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