Effects of n-type 4H-SiC epitaxial wafer quality on reliability of thermal oxides

被引：14
|
作者：
Senzaki, J [1 ]
Kojima, K [1 ]
Fukuda, K [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan
来源：
APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 25期
关键词：
D O I：
10.1063/1.1839279
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The reliability of thermal oxides was investigated on n-type 4H-SiC(0001) epitaxial wafers with different metal impurity concentrations and surface roughness. Time-zero dielectric breakdown measurements showed that almost all of the thermal oxides ruptured at a field-to-breakdown (E-BD) of 10 MV/cm, and that the maximum E-BD was 11 MV/cm, despite the influence of the epitaxial wafer. On the other hand, time-dependent dielectric breakdown measurements indicated that the charge-to-breakdown (Q(BD)) of the thermal oxides was influenced by the epitaxial wafer. This suggests that two types of oxide breakdown regimes exist under a high-stress field: one resulting from wafer influences, and the other intrinsic. (C) 2004 American Institute of Physics.
引用
收藏
页码：6182 / 6184
页数：3
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