Improving radiative recombination efficiency of green light-emitting diodes

被引:17
|
作者
Ding, Boning [1 ]
机构
[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge, England
关键词
Light-emitting diodes; gallium nitride; green gap; efficiency droop; MOLECULAR-BEAM EPITAXY; MULTIPLE-QUANTUM WELLS; A-PLANE GAN; STRUCTURAL-PROPERTIES; CARRIER LOCALIZATION; PHASE-SEPARATION; ROOM-TEMPERATURE; OPTICAL-EMISSION; GALLIUM NITRIDE; ZINCBLENDE GAN;
D O I
10.1080/02670836.2018.1461587
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Although the solid-state lighting industry has achieved huge successes in both red and blue part of the visible spectrum during the last 40 years, light-emitting diodes (LEDs) that emit green light consistently exhibit inferior efficiencies. Thanks to the use of down-conversion phosphors, white LEDs have been commercialised without using green LEDs. However, the efficiency problem of green LEDs still hinders many potential applications of solid-state lighting and limits the overall system efficiency. This review first attempts to conclude and comment on the complex factors that limit the performance of green LEDs with recent research progresses. Then the article focuses on reviewing various strategies to improve green light LED radiative recombination efficiencies.
引用
收藏
页码:1615 / 1630
页数:16
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