Memristor-based synaptic plasticity and unsupervised learning of spiking neural networks

被引:5
|
作者
Hajiabadi, Zohreh [1 ]
Shalchian, Majid [1 ]
机构
[1] Amirkabir Univ Technol, Dept Elect Engn, Tehran, Iran
关键词
Memristor; Synapse; Spiking neural network (SNN); Unsupervised learning; Spike-timing-dependent plasticity (STDP); HODGKIN-HUXLEY; CIRCUIT; NEURONS; DESIGNS; MODEL;
D O I
10.1007/s10825-021-01719-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Synaptic plasticity is studied herein using a voltage-driven memristor model. The bidirectional weight update technique is demonstrated, and significant synaptic features, including nonlinear and threshold-based learning and long-term potentiation and long-term depression, are emulated. The spike-timing-dependent plasticity (STDP) learning characteristic curve is obtained from exhaustive simulations. Then, using leaky integrate and fire neurons and memristive synapses, fully connected spiking neural networks with 2 x 2 and 4 x 2 architectures are constructed, and unsupervised learning using the STDP rule and winner-takes-all strategy is evaluated in those networks for pattern classification.
引用
收藏
页码:1625 / 1636
页数:12
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