Advanced plasma and advanced gate dielectric - A charging damage prospective

被引：5
|
作者：
Cheung, Kin P. [1 ]
机构：
[1] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA
来源：
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2007年 / 7卷 / 01期
关键词：
CMOS; gate oxide; plasma damage; reliability;
D O I：
10.1109/TDMR.2007.902471
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Current status of plasma charging damage is assessed. The impact of wide adaptation of high density plasma in IC processing to charging damage is examined for advanced CMOS technology where ultrathin gate oxide is used. The issue of measurement is high-lighted. The resulting misconception of plasma charging damage is no longer a problem when gate oxide is ultrathin is explained as a result of measurement difficulty as well as previously unexpected llonger oxide lifetime.
引用
收藏
页码：112 / 118
页数：7
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