Magnetoresistance effect of p-type diamond films in various doping levels at different temperatures

被引：10
|
作者：
Wang, WL [1 ]
Liao, KJ [1 ]
Wang, BB [1 ]
机构：
[1] Chongqing Univ, Dept Appl Phys, Chongqing 400044, Peoples R China
来源：
DIAMOND AND RELATED MATERIALS | 2000年 / 9卷 / 9-10期
基金：
中国国家自然科学基金;
关键词：
magnetoresistance; diamond films; chemical vapor deposition;
D O I：
10.1016/S0925-9635(00)00323-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The magnetoresistance effect of p-type diamond films has been investigated at different temperature. Diamond films were grown by microwave plasma chemical vapor deposition. Mirror-polished p-type Si(100) was used as a substrate material. The experimental results show that a notable magnetoresistance effect in polycrystalline and heteroepitaxial semiconducting diamond films was observed. The relative changes in the resistivity of the diamond films with magnetic field strongly depended on both boron-doped concentration in the films and geometric form of the samples. The effect of disk structure was greater than that of strip-type samples, also variation in the resistivity of heteroepitaxial diamond films was greater than that of polycrystalline diamond films at same magnetic field. The magnetoresistance of p-type diamond films was decreased with increasing both boron-doped concentration and temperature. The relative changes in resistance of the heteroepitaxial diamond films with the disk structure was increased by 0.85 at room temperature under magnetic intensity of 5T, but only 0.40 for strip-type structure. The results are discussed in detail. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：1612 / 1616
页数：5
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