n+-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts

被引：24

作者：

Lugani, L. ^{[1
]}

Malinverni, M. ^{[1
]}

Tirelli, S. ^{[2
]}

Marti, D. ^{[2
]}

Giraud, E. ^{[1
]}

Carlin, J. -F. ^{[1
]}

Bolognesi, C. R. ^{[2
]}

Grandjean, N. ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, ICMP, CH-1015 Lausanne, Switzerland

[2] ETH, Millimeter Wave Elect Grp, CH-8092 Zurich, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 20期

基金：

瑞士国家科学基金会;

关键词：

GAN; NH3;

D O I：

10.1063/1.4902347

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the low-temperature growth of heavily Si-doped (>10(20) cm(-3)) n(+)-type GaN by N-rich ammonia molecular beam epitaxy (MBE) with very low bulk resistivity (<4 x 10(-4) Omega.cm). This is applied to the realization of regrown ohmic contacts on InAlN/GaN high electron mobility transistors. A low n(+)-GaN/2 dimensional electron gas contact resistivity of 0.11 Omega.mm is measured, provided an optimized surface preparation procedure, which is shown to be critical. This proves the great potentials of ammonia MBE for the realization of high performance electronic devices. (C) 2014 AIP Publishing LLC.

引用

页数：3

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