Compact modeling of optically gated carbon nanotube field effect transistor

被引：4
|
作者：
Liao, Si-Yu [1 ]
Maneux, Cristell [1 ]
Pouget, Vincent [2 ]
Fregonese, Sebastien [2 ]
Zimmer, Thomas [1 ]
机构：
[1] Univ Bordeaux, Lab IMS, F-33405 Talence, France
[2] CNRS, UMR 5218, Lab IMS, F-33405 Talence, France
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2010年 / 247卷 / 08期
关键词：
carbon nanotubes; design; field effect transistor; modeling; trapping/detrapping; MEMORY; DEVICES; DESIGN;
D O I：
10.1002/pssb.200983818
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Nanoelectronic circuit design flow is based on device description through the compact models available in the designer device library. We have developed a compact model for the optically gated carbon nanotube field effect transistor (OG-CNTFET) by investigating the trapping and detrapping of electron effects in the device. This compact model represents an important enhancement of conventional CNTFET models already released. Especially, it includes the optical writing, the electrical reset, and the non-volatile memory effect of the device operations. We also demonstrate that the simulation results obtained using this compact model, are in close agreement with preliminary experimental measurements. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1858 / 1861
页数：4
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