n-type GaAs/AlGaAs heterostructure detector with a 3.2 THz threshold frequency

被引：19
|
作者：
Weerasekara, Aruna [1 ]
Rinzan, Mohamad
Matsik, Steven
Perera, A. G. Unil
Buchanan, Margaret
Liu, Hui Chun
von Winckel, Greg
Stintz, Andreas
Krishna, Sanjay
机构：
[1] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA
[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
[3] Univ New Mexico, Ctr High Technol Mat, Dept Elect Engn & Civil Engn, Albuquerque, NM 87106 USA
来源：
OPTICS LETTERS | 2007年 / 32卷 / 10期
关键词：
D O I：
10.1364/OL.32.001335
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Terahertz detection using the free-carrier absorption requires a small internal work function of the order of a few millielectron volts. A threshold frequency of 3.2 THz (93 mu m or similar to 13 meV work function) is demonstrated by using a 1 X 10(18) cm(-3) Si-doped GaAs emitter and an undoped Al0.04Ga0.96As barrier structure. The peak responsivity of 6.5 A/W, detectivity of 5.5 X 10(8) Jones, and quantum efficiency of 19% were obtained at 7.1 THz under a bias field of 0.7 kV/cm at 6 K, while the detector spectral response range spans from 3.2 to 30 THz. (C) 2007 Optical Society of America
引用
收藏
页码：1335 / 1337
页数：3
相关论文
共 50 条
  • [1] AlGaAs emitter/GaAs barrier terahertz detector with a 2.3 THz threshold
    Rinzan, MBM
    Perera, AGU
    Matsik, SG
    Liu, HC
    Wasilewski, ZR
    Buchanan, M
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (07) : 1 - 3
  • [2] Nonlinear THz response of n-type GaAs
    Woerner, Michael
    Kuehn, Wilhelm
    Gaal, Peter
    Reimann, Klaus
    Elsaesser, Thomas
    Hey, Rudolf
    [J]. ULTRAFAST PHENOMENA IN SEMICONDUCTORS AND NANOSTRUCTURE MATERIALS XIII, 2009, 7214
  • [3] Nonlinear THz Spectroscopy of n-type GaAs
    Gaal, P.
    Reimann, K.
    Woerner, M.
    Elsaesser, T.
    Hey, R.
    Ploog, K. H.
    [J]. ULTRAFAST PHENOMENA XV, 2007, 88 : 799 - +
  • [4] THz GaAs/AlGaAs quantum well detector
    Patrashin, M.
    Hosako, I.
    [J]. CONFERENCE DIGEST OF THE 2006 JOINT 31ST INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 14TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS, 2006, : 512 - 512
  • [5] Optical absorption in a waveguide based on an n-type AlGaAs heterostructure
    Bobretsova, Yu K.
    Veselov, D. A.
    Klimov, A. A.
    Bakhvalov, K., V
    Shamakhov, V. V.
    Slipchenko, S. O.
    Andryushkin, V. V.
    Pikhtin, N. A.
    [J]. QUANTUM ELECTRONICS, 2021, 51 (11) : 987 - 991
  • [6] SINGLE QUANTUM-WELL GAAS/ALGAAS SEPARATE CONFINEMENT HETEROSTRUCTURE LASERS WITH N-TYPE MODULATION DOPED CORES
    SHANK, SM
    VARRIANO, JA
    WICKS, GW
    [J]. APPLIED PHYSICS LETTERS, 1992, 61 (24) : 2851 - 2853
  • [7] n-type doping modulation of double GaAs/AlGaAs quantum wells
    Jaouane, M.
    Ed-Dahmouny, A.
    Fakkahi, A.
    Arraoui, R.
    El-Bakkari, K.
    Azmi, H.
    Sali, A.
    Duque, C. A.
    [J]. COMPUTATIONAL MATERIALS SCIENCE, 2024, 238
  • [8] Transport study of GaAs/AlGaAs heterostructure- and n-type GaAs-devices in the 'anti Hall bar within a Hall bar' configuration
    Mani, RG
    [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1996, 65 (06) : 1751 - 1759
  • [9] Transport Study of GaAs/AlGaAs Heterostructure- and n-Type GaAs-Devices in the `Anti Hall Bar within a Hall Bar' Configuration
    [J]. J Phys Soc Jpn, 6 (1751):
  • [10] Phonon-pumped terahertz gain in n-type GaAs/AlGaAs superlattices
    Sun, G
    Soref, RA
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (22) : 3520 - 3522
12345