Initial stage of hexagonal boron nitride growth in diffusion and precipitation method

被引:3
|
作者
Suzuki, Satoru [1 ]
Ogawa, Yui [1 ]
Wang, Shengnan [1 ]
Kumakura, Kazuhide [1 ]
机构
[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
关键词
CHEMICAL-VAPOR-DEPOSITION; 2-DIMENSIONAL BORON; GRAPHENE ELECTRONICS; LIQUID NICKEL; MONOLAYER; FILMS; SURFACE; COPPER; SEGREGATION; PERFORMANCE;
D O I
10.7567/JJAP.56.06GE06
中图分类号
O59 [应用物理学];
学科分类号
摘要
This study investigated the initial stage of hexagonal boron nitride (h-BN) formation on a Ni plate by the diffusion and precipitation method. Regular triangle-shaped domains with two orientations were observed on several Ni faces, as commonly observed in the chemical vapor deposition method. On (213) surfaces, strained triangle-shaped domains with unique orientation were observed, suggesting the possible formation of large single-crystalline domains. Moreover, stripe-shaped h-BN with lengths comparable to Ni grain size (similar to 100 mu m) was formed along the [112] direction on (111) surfaces. Our results show that boron stripes are first formed and the following nitridation converts them into h-BN stripes. (C) 2017 The Japan Society of Applied Physics
引用
收藏
页数:5
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