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Initial stage of hexagonal boron nitride growth in diffusion and precipitation method
被引:3
|作者:
Suzuki, Satoru
[1
]
Ogawa, Yui
[1
]
Wang, Shengnan
[1
]
Kumakura, Kazuhide
[1
]
机构:
[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
关键词:
CHEMICAL-VAPOR-DEPOSITION;
2-DIMENSIONAL BORON;
GRAPHENE ELECTRONICS;
LIQUID NICKEL;
MONOLAYER;
FILMS;
SURFACE;
COPPER;
SEGREGATION;
PERFORMANCE;
D O I:
10.7567/JJAP.56.06GE06
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
This study investigated the initial stage of hexagonal boron nitride (h-BN) formation on a Ni plate by the diffusion and precipitation method. Regular triangle-shaped domains with two orientations were observed on several Ni faces, as commonly observed in the chemical vapor deposition method. On (213) surfaces, strained triangle-shaped domains with unique orientation were observed, suggesting the possible formation of large single-crystalline domains. Moreover, stripe-shaped h-BN with lengths comparable to Ni grain size (similar to 100 mu m) was formed along the [112] direction on (111) surfaces. Our results show that boron stripes are first formed and the following nitridation converts them into h-BN stripes. (C) 2017 The Japan Society of Applied Physics
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页数:5
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