X-ray microscopy in Zernike phase contrast mode at 4 keV photon energy with 60 nm resolution

被引：72
|
作者：
Neuhäusler, U
Schneider, G
Ludwig, W
Meyer, MA
Zschech, E
Hambach, D
机构：
[1] European Synchrotron Radiat Facil, F-38043 Grenoble, France
[2] Lawrence Berkeley Natl Lab, Ctr Xray Opt, Berkeley, CA 94720 USA
[3] AMD Saxony LLC & Co KG, D-01330 Dresden, Germany
[4] Univ Gottingen, Inst Rontgenphys, D-37073 Gottingen, Germany
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2003年 / 36卷 / 10A期
关键词：
D O I：
10.1088/0022-3727/36/10A/316
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on x-ray microscopy of advanced microelectronic devices imaged in Zernike-type phase contrast mode at 4 keV photon energy. Fresnel zone plates were used as high resolution x-ray objectives providing 60 nm spatial resolution. Integrated circuit copper interconnect structures were imaged in positive as well as negative phase contrast. In both cases the phase contrast in the x-ray images is about five times higher than the pure absorption contrast.
引用
收藏
页码：A79 / A82
页数：4
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