Effect of interface bonding on the transport properties in CoFe2/SrTiO3/CoFe2/NiFe magnetic tunnel junctions

被引：4

作者：

Moubah, R. ^{[1
]}

Colis, S. ^{[1
]}

Schleicher, F. ^{[1
]}

Najjari, N. ^{[1
]}

Majjad, H. ^{[1
]}

Versini, G. ^{[1
]}

Barre, S. ^{[1
]}

Ulhaq-Bouillet, C. ^{[1
]}

Schmerber, G. ^{[1
]}

Bowen, M. ^{[1
]}

Dinia, A. ^{[1
]}

机构：

[1] UDS ECPM, UMR UDS CNRS 7504, IPCMS, F-67034 Strasbourg 2, France

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 02期

关键词：

YTTRIUM-OXIDE BARRIER; BIAS-VOLTAGE; ROOM-TEMPERATURE; MAGNETORESISTANCE; ELECTRODES; DEPENDENCE; FILMS;

D O I：

10.1103/PhysRevB.82.024415

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

To test whether the interface between an Fe-alloy electrode and a SrTiO3 (STO) tunnel barrier constitutes or not a good spin injector, we have studied the transport and magnetic properties of CoFe2 (7.5 nm)/SrTiO3 (3 nm)/CoFe2 (1 nm)/NiFe (8 nm) stacks prepared by pulsed-laser deposition on STO(001) substrates and varied the STO barrier deposition temperature. While this parameter does not strongly influence the magnetic properties of the two electrodes, the resulting barrier height at the bottom CoFe2/STO interface is lowered if the STO barrier is deposited at 300 degrees C rather than 80 degrees C and an already low-tunnel-magnetoresistance ratio is suppressed. We discuss our findings in terms of the oxide stability of the CoFe2/STO interface.

引用

页数：5

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