Ultra-thin Single-junction GaAs Solar Cells For Extreme Space Environments

被引:0
|
作者
Sayre, Larkin [1 ]
Lang, Felix [2 ]
Bundesmann, Juergen [3 ]
Denker, Andrea [3 ]
Pearce, Phoebe [4 ]
Johnson, Andrew [5 ]
Hirst, Louise [2 ]
机构
[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge, England
[2] Univ Cambridge, Dept Phys, Cambridge, England
[3] Helmholtz Zentrum Berlin, Dept Protons Therapy, Berlin, Germany
[4] Imperial Coll London, Dept Phys, London, England
[5] IQE Plc, Cardiff, Wales
基金
欧洲研究理事会;
关键词
ultra-thin; band structure; characterisation; radiation tolerance; defects;
D O I
10.1109/pvsc45281.2020.9300596
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Ultra-thin (less than 100 nm) photovoltaics for space power applications are proposed due to their intrinsic radiation tolerance [1]. They are a potentially enabling technology for space missions in high radiation environments such as Highly Elliptical Earth Orbits (HEO) and the orbits of Jupiter's scientifically interesting moon, Europa. GaAs solar cells with an 80 nm active layer were designed, fabricated and tested under 68 MeV proton irradiation. The results of electrical characterisation before and after proton beam exposure at two different fluences shows their tolerance to these harsh conditions.
引用
收藏
页码:1621 / 1625
页数:5
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