A 51.3-MHz 21.8-ppm/°C CMOS Relaxation Oscillator With Temperature Compensation

被引：29
|
作者：
Tsai, Yu-Kai [1 ,2 ]
Lu, Liang-Hung [1 ,2 ]
机构：
[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan
[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan
来源：
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2017年 / 64卷 / 05期
关键词：
Integrated error feedback (IEF); low power; relaxation oscillator; temperature compensation;
D O I：
10.1109/TCSII.2016.2581825
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 51.3-MHz 18-mu W 21.8-ppm/degrees C relaxation oscillator is presented in 90-nm CMOS. The proposed oscillator employs an integrated error feedback and composite resistors to minimize its sensitivity to temperature variations. For a temperature range from -20 degrees C to 100 degrees C, the fabricated circuit demonstrates a frequency variation less than +/- 0.13%, leading to an average frequency drift of 21.8 ppm/degrees C. As the supply voltage changes from 0.8 to 1.2 V, the frequency variation is +/- 0.53%. The measured rms jitter and phase noise at 1-MHz offset are 89.27 ps and -83.29 dBc/Hz, respectively.
引用
收藏
页码：490 / 494
页数：5
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