Nucleation of hydrogen-induced platelets in silicon

被引：69
|
作者：
Nickel, NH
Anderson, GB
Johnson, NM
Walker, J
机构：
[1] Hahn Meitner Inst Berlin GmbH, D-12489 Berlin, Germany
[2] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA
来源：
PHYSICAL REVIEW B | 2000年 / 62卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.62.8012
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Hydrogen-induced platelet generation in single-crystal silicon was investigated as a function of the Fermi energy. Platelet formation is observed only for Fermi-level positions of E-C-E-F less than or equal to 0.3 eV. With decreasing E-C-E-F the platelet density increases monotonically to 2.45 X 10(17) cm(-3). Experiments performed on electrically compensated silicon demonstrate that the formation of hydrogen-induced platelets is solely controlled by the Fermi energy.
引用
收藏
页码：8012 / 8015
页数：4
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