Numerical model of capacitance in vertical-cavity surface-emitting lasers

被引:21
|
作者
Wasiak, M. [1 ]
Spiewak, P. [1 ]
Moser, P. [2 ,3 ]
Walczak, J. [1 ,4 ]
Sarzala, R. P. [1 ]
Czyszanowski, T. [1 ]
Lott, J. A. [2 ,3 ]
机构
[1] Lodz Univ Technol, Photon Grp, PL-90924 Lodz, Poland
[2] Tech Univ Berlin, Inst Solid State Phys, Hardenbergstr 36, Berlin, Germany
[3] Tech Univ Berlin, Ctr Nanophoton, Hardenbergstr 36, Berlin, Germany
[4] JWS, Piotrkowska 204-210 M 115, PL-90369 Lodz, Poland
关键词
modeling of semiconductor lasers; capacitance; high frequency modulation; VCSEL; DIFFUSION CAPACITANCE; 980-NM VCSELS; BANDWIDTH; IMPACT;
D O I
10.1088/0022-3727/49/17/175104
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this paper we present a model of impedance and modulation time constants for vertical-cavity surface-emitting lasers (VCSELs) operating above threshold current. A 3D numerical model of potential distribution in the device under a constant bias is used to determine resistances and capacitances of an appropriate equivalent circuit. The model has been verified by comparing the theoretical and measured impedance as a function of frequency Z(f). The measured Z(f) is determined from S-11 small signal modulation experiments. The comparison has been performed for frequencies up to 40 GHz and a wide range of above threshold currents, for two oxide-confined VCSELs of different aperture diameters. We obtained a very good quantitative agreement for frequencies up to about 15 GHz and qualitative agreement over the entire range of currents and frequencies.
引用
收藏
页数:7
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