modeling of semiconductor lasers;
capacitance;
high frequency modulation;
VCSEL;
DIFFUSION CAPACITANCE;
980-NM VCSELS;
BANDWIDTH;
IMPACT;
D O I:
10.1088/0022-3727/49/17/175104
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
In this paper we present a model of impedance and modulation time constants for vertical-cavity surface-emitting lasers (VCSELs) operating above threshold current. A 3D numerical model of potential distribution in the device under a constant bias is used to determine resistances and capacitances of an appropriate equivalent circuit. The model has been verified by comparing the theoretical and measured impedance as a function of frequency Z(f). The measured Z(f) is determined from S-11 small signal modulation experiments. The comparison has been performed for frequencies up to 40 GHz and a wide range of above threshold currents, for two oxide-confined VCSELs of different aperture diameters. We obtained a very good quantitative agreement for frequencies up to about 15 GHz and qualitative agreement over the entire range of currents and frequencies.