Electrical properties of TiO2 films deposited on strained Si1-yCy layers

被引：5

作者：

Dalapati, GK ^{[1
]}

Chattejee, S ^{[1
]}

Samanta, SK ^{[1
]}

Maiti, CK ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect & Elect Commun Engn, Kharagpur 721302, W Bengal, India

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 03期

关键词：

D O I：

10.1049/el:20030210

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Insulating high dielectric constant (high-k) titanium dioxide (TiO2) films have been deposited on solid phase epitaxially-grown tensilely strained Si1-yCy layers by microwave plasma enhanced chemical vapour deposition using titanium tetrakis isopropoxide (TTIP) as Source material and oxygen. Using metal insulator semiconductor capacitor structure, the interface and electrical properties have been studied both at room and high temperature. Good electrical properties are observed in deposited TiO2 thin films.

引用

页码：323 / 324

页数：2

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