Study on silicidation reaction of Fe nanodots with SiH4

被引：1

作者：

Furuhata, Hiroshi ^{[1
]}

Makihara, Katsunori ^{[1
]}

Shimura, Yosuke ^{[2
,3
]}

Fujimori, Shuntaro ^{[1
]}

Imai, Yuki ^{[1
]}

Ohta, Akio ^{[1
]}

Taoka, Noriyuki ^{[1
]}

Miyazaki, Seiichi ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan

[2] Shizuoka Univ, Grad Sch Integrated Sci & Technol, Hamamatsu, Shizuoka 4328011, Japan

[3] Res Inst Elect, Hamamatsu, Shizuoka 4328011, Japan

来源：

APPLIED PHYSICS EXPRESS | 2022年 / 15卷 / 05期

关键词：

nanodots; Fe silicide; beta-FeSi2; CVD; OPTICAL-ABSORPTION; EPITAXIAL-GROWTH; BETA-FESI2; PHOTOLUMINESCENCE; TEMPERATURE; PLASMA; ELECTROLUMINESCENCE; IMPLANTATION;

D O I：

10.35848/1882-0786/ac6727

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated the formation of Fe-silicide nanodots (NDs) on SiO2 by exposing Fe NDs to SiH4. The Fe NDs were formed by exposing ultrathin Fe film deposited on SiO2 to remote H-2-plasma. After SiH4 exposure at 400 degrees C, formation of Fe-silicide NDs with an areal dot density over 10(11) cm(-2) was confirmed. Photoluminescence from the Fe-silicide NDs was observable at room temperature in the near-infrared, being attributed to radiative recombination between quantized states in the NDs. The results will lead to the development of Si-based light-emitting devices that are highly compatible with Si ultralarge-scale-integration processing. (C) 2022 The Japan Society of Applied Physics

引用

页数：4

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