Effect of Mg/Zn RF Power Ratio and Substrate Temperature on Optical and Structural Properties of RF Co-Sputtered MgxZn1-XO Alloy Thin Films

被引：0
|
作者：
Chetia, S. K. [1 ,2 ]
Ajimsha, R. S. [1 ]
Das, Amit K. [1 ]
Misra, P. [1 ,2 ]
机构：
[1] Raja Ramanna Ctr Adv Technol, Oxide Nanoelect Lab, Laser Mat Proc Div, Indore 452013, India
[2] Homi Bhabha Natl Inst, Training Sch Complex, Mumbai 400085, Maharashtra, India
来源：
DAE SOLID STATE PHYSICS SYMPOSIUM 2019 | 2020年 / 2265卷
关键词：
D O I：
10.1063/5.0017596
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report the growth of MgZnO thin films on Si (100) substrates using rf co-sputtering technique. It is found that structural and optical properties of MgZnO thin films highly depend on Mg/Zn rf power ratio and substrate temperature. We observe an increase in band gap of MgZnO thin films from 3.3 eV to 5.9 eV with increasing Mg/Zn rf power ratio from 0 to 2.22 at 400 degrees C substrate temperature. Whereas, XRD studies show a structural phase transition of MgZnO films from hexagonal wurtzite via mixed phase region of both wurtzite and cubic phases to cubic phase with increase in Mg/Zn rf power ratio. As the substrate temperature increases from 400 degrees C to 700 degrees C, the MgZnO films in the mixed phase region shows single cubic phase.
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页数：4
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