Responsivity at 0.27 THz of a Heterostructure Field Effect Transistor Detector in a Quasi-optical Package

被引：0

作者：

Giliberti, Valeria ^{[1
,3
]}

Casini, Roberto ^{[1
]}

Di Gaspare, Alessandra ^{[1
]}

Lisauskas, Alvydas ^{[2
]}

Roskos, Hartmut G. ^{[2
]}

Ortolani, Michele ^{[1
,3
]}

机构：

[1] CNR, IFN, Inst Photon & Nanotechnol, Rome, Italy

[2] Goethe Univ Frankfurt, Physikalisches Inst, Frankfurt, Germany

[3] Sapienza Univ, Dept Phys, Rome, Italy

来源：

2013 38TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated AlGaAs/InGaAs/AlGaAs heterostructure field effect transistors (HFET) with integrated on-chip antennas and we have measured their optical responsivity when mounted in a in-house developed quasi-optical package with a silicon substrate lens

引用

页数：2

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