Preparation and characterization of ZrO2-SiO2 binary films for planar optical waveguides

被引:10
|
作者
Hua, B [1 ]
Si, JH
Hirao, K
Qian, GD
Wang, MQ
机构
[1] Kyoto Univ, Grad Sch Engn, Dept Chem Mat, Nishikyo Ku, Kyoto 6158510, Japan
[2] JST, Photon Craft Project, SuperLab 205, Seika, Kyoto 6190239, Japan
[3] Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China
关键词
D O I
10.1016/j.jnoncrysol.2004.09.018
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
ZrO2-SiO2 binary films for active optical waveguides were prepared by the sol-gel method with zirconium oxychloride and tetraethoxysilane as precursors. The main factors that influence the film thickness and refractive index have been found. The relationship between the film refractive index composition and heat treatment temperature has been determined. The continuous tuning of the thickness and refractive index of the thin films has also been achieved. which will open up new possibilities in the development of active optical waveguides. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:41 / 44
页数:4
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